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BUK7L06-34ARC

N-channel TrenchPLUS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include internal gate resistors and TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This product has been de

文件:342.44 Kbytes 页数:16 Pages

NEXPERIA

安世

BUK7L06-34ARC

TrenchPLUS standard level FET

文件:318.16 Kbytes 页数:14 Pages

PHI

PHI

PHI

BUK7L06-34ARC

N-channel TrenchPLUS standard level FET

文件:227.81 Kbytes 页数:15 Pages

恩XP

恩XP

BUK7L06-34ARC

N-channel TrenchPLUS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include internal gate resistors and TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the ap

Nexperia

安世

详细参数

  • 型号:

    BUK7L06-34ARC

  • 功能描述:

    MOSFET TRENCHPLUS MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

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更多BUK7L06-34ARC供应商 更新时间2026-2-2 16:30:00