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BUK7C08-55AITE中文资料安世数据手册PDF规格书

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厂商型号

BUK7C08-55AITE

功能描述

N-channel TrenchPLUS standard level FET

文件大小

716.14 Kbytes

页面数量

15

生产厂商

NEXPERIA Nexperia B.V. All rights reserved

中文名称

安世 安世半导体(中国)有限公司

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-9 20:00:00

人工找货

BUK7C08-55AITE价格和库存,欢迎联系客服免费人工找货

BUK7C08-55AITE规格书详情

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. The devices include TrenchPLUS current sensing

and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Allows responsive temperature

monitoring due to integrated

temperature sensor

Electrostatically robust due to

integrated protection diodes

Low conduction losses due to low

on-state resistance

Q101 compliant

Reduced component count due to

integrated current sensor

1.3 Applications

Automotive and general purpose

power switching

Fan control

Electrical Power Assisted Steering

(EPAS)

Variable Valve Timing for engines

产品属性

  • 型号:

    BUK7C08-55AITE

  • 功能描述:

    MOSFET TRENCHPLUS MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

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