TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Features ■ TrenchMOS™ technology ■ Q101 compliant ■ 150 °C rated ■ Standard level compatible. Applications ■ Automotive and gene

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PHI

PHI

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

文件：931.38 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

文件：341.16 Kbytes 页数：13 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. • Low conduction losses due to low on-state resistance\n• Q101 compliant\n• Suitable for standard level gate drive sources;

Nexperia

安世