isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 26A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 60mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits

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TrenchMOS standard level FET

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PHI

N-channel TrenchMOS standard level FET

文件：217.16 Kbytes 页数：13 Pages

PHI

PHI

BUK7660-100A - N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET - Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ·AEC Q101 compliant\n·Low conduction losses due to low on-state resistance\n·Suitable for standard level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

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