BUK7628-100A

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeavailableinTO220ABandSOT404.Using’trench’technologywhichfeaturesverylowon-stateresistance.Itisintendedforuseinautomotiveandgeneralpurposeswitchingapplication

PHI

BUK7628-100A

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=47A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=28mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

BUK7628-100A

N-channel TrenchMOS standard level FET

1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 1.2Featuresandbenefits

BUK7628-100A

N-channel TrenchMOS standard level FET; • AEC Q101 compliant\n• Low conduction losses due to low on-state resistance\n;

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.\n

BUK7628-100A_15

N-channel TrenchMOS standard level FET

PHI