BUK7210-55B规格书应用电路库存现货安世-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
BUK7210-55B	文件：731.19 Kbytes Page：14 Pages	N-channel TrenchMOS standard level FET 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critica 文件：731.19 Kbytes 页数：14 Pages	NEXPERIA 安世	NEXPERIA
BUK7210-55B	文件：199.16 Kbytes Page：14 Pages	N-channel TrenchMOS standard level FET 文件：199.16 Kbytes 页数：14 Pages	PHI PHI	PHI
BUK7210-55B	文件：199.16 Kbytes Page：14 Pages	N-channel TrenchMOS standard level FET 文件：199.16 Kbytes 页数：14 Pages	恩XP	恩XP
BUK7210-55B_15	文件：199.16 Kbytes Page：14 Pages	N-channel TrenchMOS standard level FET 文件：199.16 Kbytes 页数：14 Pages	PHI PHI	PHI
BUK7210-55B	文件：300 bytes Page：1 Pages	BUK7210-55B - N-channel TrenchMOS standard level FET N-channel TrenchMOS standard level FET - Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using 恩XP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive c ·185 °C rated\n·Q101 compliant\n·Standard level compatible\n·Very low on-state resistance\n;	Nexperia 安世	Nexperia

更多BUK7210-55B供应商更新时间2026-1-30 16:50:00