N-channel TrenchMOS intermediate level FET

1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features

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N-channel TrenchMOS intermediate level FET

文件：391.44 Kbytes 页数：14 Pages

恩XP

N-channel TrenchMOS intermediate level FET

文件：391.44 Kbytes 页数：14 Pages

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飞利浦

BUK6218-40C - N-channel TrenchMOS intermediate level FET

N-channel TrenchMOS intermediate level FET - Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical application ·AEC Q101 compliant\n·Suitable for standard and logic level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

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