isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 30V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

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ISC

无锡固电

N-channel TrenchMOS intermediate level FET

1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefi

文件：904.56 Kbytes 页数：10 Pages

NEXPERIA

安世

TrenchMOS Intermediate level FET

文件：285.27 Kbytes 页数：13 Pages

PHI

PHI

N-channel TrenchMOS intermediate level FET

文件：304.65 Kbytes 页数：10 Pages

PHI

PHI

BUK6213-30A - N-channel TrenchMOS intermediate level FET

N-channel TrenchMOS intermediate level FET - Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ·AEC Q101 compliant\n·Suitable for logic or standard level gate drive sources\n·Suitable for thermally demanding environments due to 175 °C rating;

Nexperia

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