PowerMOS transistor Logic level FET

文件：97.45 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications

文件：56.64 Kbytes 页数：7 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

文件：306.3 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 100V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose sw

文件：306.3 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications

文件：56.64 Kbytes 页数：7 Pages

PHI

PHI

PowerMOS transistor Voltage clamped logic level FET

GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications. It has built-in zener diodes providing active drain voltage clamping.

文件：69.73 Kbytes 页数：9 Pages

PHI

PHI

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applic

文件：54.16 Kbytes 页数：7 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

文件：306.43 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

文件：97.12 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= 60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose swi

文件：306.43 Kbytes 页数：2 Pages

ISC

无锡固电