isc Silicon NPN Power Transistors

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 10V(Min.) ·Noise figure (NF Typ) = 1.8 dB ·9 GHz fT silicon technology APPLICATIONS ·Designed for low frequency power amplifier applications.

文件：269.37 Kbytes 页数：3 Pages

ISC

无锡固电

SILICON RECTIFIER DIODES

FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop

文件：16.7 Kbytes 页数：2 Pages

EIC

Silicon Rectifiers

Silicon Rectifiers • Nominal current ñ Nennstrom 5 A • Repetitive peak reverse voltage 50 ... 1000 V • Plastic case ÿ 5.4 x 7.5 [mm] • Weight approx. ñ Gewicht ca. 1.4 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack see page 16

文件：179.43 Kbytes 页数：2 Pages

Diotec

德欧泰克

5.0 AMP.SILICON RECTIFIERS

FEATURES : * Low forward voltage drop * High current capability * High reliability * High surge current capability

文件：138.16 Kbytes 页数：2 Pages

JGD

固锝电子