丝印：BUF16821；Package：HTSSOP；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

文件：931.76 Kbytes 页数：29 Pages

TI

德州仪器

丝印：BUF16821；Package：HTSSOP；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

文件：931.76 Kbytes 页数：29 Pages

TI

德州仪器

丝印：BUF16821B；Package：HTSSOP；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

文件：931.76 Kbytes 页数：29 Pages

TI

德州仪器

丝印：BUF16821B；Package：HTSSOP；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

文件：931.76 Kbytes 页数：29 Pages

TI

德州仪器

丝印：BUF16821；Package：HTSSOP；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

文件：931.76 Kbytes 页数：29 Pages

TI

德州仪器

丝印：BUF16821；Package：HTSSOP；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

文件：931.76 Kbytes 页数：29 Pages

TI

德州仪器

丝印：BUF16821B；Package：HTSSOP；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

文件：931.76 Kbytes 页数：29 Pages

TI

德州仪器

丝印：BUF16821B；Package：HTSSOP；Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1FEATURES 234• 10-BIT RESOLUTION • 16-CHANNEL P-GAMMA • 2-CHANNEL P-VCOM • 16x REWRITABLE NONVOLATILE MEMORY • TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS • RAIL-TO-RAIL OUTPUT – 300mV Min Swing-to-Rail (10mA) – > 300mA Max IOUT • LOW SUPPLY CURRENT • SUPPLY VOLTAGE: 9V to 20V • DIGITA

文件：931.76 Kbytes 页数：29 Pages

TI

德州仪器

丝印：B16821Q1；Package：HTSSOP；BUF16821-Q1 Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1 Features 1• AEC-Q100 Qualified with: – Temperature Grade 3: –40°C to 85°C – HBM ESD Classification 2 – CDM ESD Classification C4B • 16-Channel P-Gamma, 2-Channel P-VCOM, 10- Bit Resolution • 16x Rewritable Nonvolatile Memory • Two Independent Pin-Selectable Memory Banks • Rail-to-Rail O

文件：1.15144 Mbytes 页数：39 Pages

TI

德州仪器

丝印：B16821Q1；Package：HTSSOP；BUF16821-Q1 Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

1 Features 1• AEC-Q100 Qualified with: – Temperature Grade 3: –40°C to 85°C – HBM ESD Classification 2 – CDM ESD Classification C4B • 16-Channel P-Gamma, 2-Channel P-VCOM, 10- Bit Resolution • 16x Rewritable Nonvolatile Memory • Two Independent Pin-Selectable Memory Banks • Rail-to-Rail O

文件：1.15144 Mbytes 页数：39 Pages

TI

德州仪器