BUB323Z中文资料NPN 达林顿双极功率晶体管数据手册ONSEMI规格书

描述 Description

The BUB323Z is a planar, monolithic, high voltagebipolar power Darlington transistor with a built-in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control.

特性 Features

• Integrated High–Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V)Guaranteed Over the –40°C to +125°C Temperature Range
• Clamping Energy Capability 100% Tested in a Live Ignition Circuit
• High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range
• Design Guarantees Operation in SOA at All Times
• Pb-Free Packages are Available

简介

BUB323Z属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由ONSEMI制造生产的BUB323Z晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。