SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers

文件：141.97 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION • High Switching Speed • High Voltage • Built-in Integrated Diode APPLICATIONS • Designed for use in horizontal deflection circuits of colour TV receivers.

文件：132.03 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON DIFFUSED POWER TRANSISTORS

SILICON DIFFUSED POWER TRANSISTOR The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated efficiency diode. It is intended for high voltage, high-speed. Primarily for use in horizontal deflection circuits of colour television receivers. Compliance to RoHS.

文件：234.69 Kbytes 页数：2 Pages

COMSET

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

文件：55.14 Kbytes 页数：7 Pages

PHI

飞利浦

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PFa package ·High voltage, high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers

文件：119.24 Kbytes 页数：3 Pages

SAVANTIC

SILICON DIFFUSED POWER TRANSISTORS

[COMSET] The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers.

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etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

文件：75.31 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ■ BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY ■ U.L. R

文件：428.84 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

文件：149.62 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage, high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers.

文件：132.79 Kbytes 页数：3 Pages

ISC

无锡固电