Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers.

文件：72.76 Kbytes 页数：6 Pages

PHI

飞利浦

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

文件：129.84 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter SustainingVoltage- : VCEO(Sus)= 700V (Min) • High Switching Speed - APPLICATIONS • Designed for use in horizontal deflectioncircuits of color TVreceivers.

文件：126.03 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of colour TV receivers.

文件：117.11 Kbytes 页数：3 Pages

SAVANTIC

High voltage NPN Power transistor for standard Definition CRT display

Description The BU508AW is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Features ■ State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable per

文件：109.88 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

High voltage NPN power transistor for standard definition CRT display

文件：214.82 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN Power Transistors

文件：118.69 Kbytes 页数：3 Pages

SAVANTIC

High voltage NPN power transistor for standard definition CRT display

文件：214.82 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

标清CRT显示器的高压NPN功率晶体管

The BU508AW is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. • TO-247 semi-insulated power package \n• State-of-the-art technology:Diffused collector “Enhanced generation” \n• Low base-drive requirement \n• Stable performances versus operating temperature variation \n• High ruggedness \n• Tigh hFE range at operating collector current;

ST

意法半导体

Silicon Diffused Power Transistor

恩XP