BU323Z中文资料NPN 达林顿双极功率晶体管数据手册ONSEMI规格书

描述 Description

The BU323Z is a planar, monolithic, high voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as electronic ignition, switching regulators and motor control.

特性 Features

• Integrated High-Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the -40 C to +125 C Temperature Range
• Clamping Energy Capability 100% Tested in a Live Ignition Circuit
• High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range
• Design Guarantees Operation in SOA at All Times
• Offered in Plastic SOT-93/TO-218 Type or TO-220 Packages
• These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

简介

BU323Z属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的BU323Z晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。