Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

文件：20.48 Kbytes 页数：4 Pages

PHI

PHI

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

文件：20.48 Kbytes 页数：4 Pages

PHI

PHI

Silicon Diffused Power Transistor

恩XP

Power Transistor NPN- Silicon Power Transistor Chip

PROCESS DETAILS Die Size 68 x 68 MILS Die Thickness 8.5 MILS ± 0.6 MILS Base Bonding Pad Area 17.7 x 10.2 MILS Emitter Bonding Pad Area 18.1 x 8.9 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ag - 14,000Å

文件：129.07 Kbytes 页数：2 Pages

Central

Power Coated Inductors - Axial

文件：114.76 Kbytes 页数：1 Pages

CT

Central Technologies

Power Coated Inductors - Axial

文件：114.76 Kbytes 页数：1 Pages

CT

Central Technologies