NPN SILICON PLANAR POWER TRANSISTOR

NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package

文件：119.99 Kbytes 页数：3 Pages

CDIL

Power Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER

文件：53.7 Kbytes 页数：1 Pages

Central

POWER TRANSISTORS(5.0A,1300-1500V,55W)

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS

文件：117.11 Kbytes 页数：3 Pages

MOSPEC

统懋

5.0 AMPERES NPN SILICON POWER TRANSISTOR 700 VOLTS

Horizontal Deflection Transistor . . . designed for use in televisions. • Collector–Emitter Voltages VCES 1500 Volts • Fast Switching — 400 ns Typical Fall Time • Low Thermal Resistance 1°C/W Increased Reliability • Glass Passivated (Patented Photoglass). Triple Diffused Mesa Te

文件：202 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receives.

文件：131.53 Kbytes 页数：3 Pages

ISC

无锡固电

HORIZONTAL DEFLECTION TRANSISTOR

5.0 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 55 WATTS ...specifically designedfor use in large screen color deflection circuits. FEATURES: * Collector-EmitterSustaining Voltage - VC6X = 1300 V (Min.) - BU207 = 1500V (Win.)-BU208 * Glastivated Base-Collector Junction

文件：157.58 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers.

文件：110.99 Kbytes 页数：3 Pages

SAVANTIC

NPN SILICON POWER TRANSISTORS

NPN Silicon Power Transistors

文件：100.68 Kbytes 页数：4 Pages

SIEMENS

西门子

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR • High Collector-Base Voltage(VCBO=1500V) • High Speed Switching

文件：32.82 Kbytes 页数：1 Pages

WINGS

永盛电子

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. ■ STMicroelectronics PREFERRED SALESTYPES ■ HIGH VOLTAGE CAPABILITY (> 1500 V) ■ FULLY INSULATE

文件：78.15 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体