BU104

isc Silicon NPN Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=150V(Min.) •LowCollectorSaturationVoltage- :VCE(sat)=2.5V(Max.)@IC=7A APPLICATIONS •DesignedforuseinhorizontaldeflexionoutputstageofB/W TVreceivers.

BU104

Silicon NPN Power Transistor

BUZ104

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtratedLowon-resistance)

•Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •Lowon-resistance •175°Coperatingtemperature •alsoinTO-220SMDavailable

BUZ104

Ultralowon-resistance

BUZ104L

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-ratedLogicLeveldv/dtratedLowon-resistance)

•Nchannel •Enhancementmode •Avalanche-rated •LogicLevel •dv/dtrated •Lowon-resistance •175°Coperatingtemperature •alsoinTO-220SMDavailable

BUZ104S

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated175째Coperatingtemperature)

•Nchannel •Enhancementmode •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

BUZ104SL

SIPMOSPowerTransistor(NchannelEnhancementmodeLogicLevelAvalanche-rateddv/dtrated175째Coperatingtemperature)

•Nchannel •Enhancementmode •LogicLevel •Avalanche-rated •dv/dtrated •175°Coperatingtemperature •alsoinSMDavailable

BW104-S

CHIPLEDDEVICE

Features □Package:1.6×0.8×0.4mm □Colorcoordinates:X=0.21Y=0.16accordingtoCIE1931 □Tapeandreelpacking

BWT-104

RESEARCHQUALITYBENCHTOPWINDTUNNEL

BYX104G

High-voltagesoft-recoverycontrolledavalancherectifiers

DESCRIPTION Ruggedglasspackage,usingahightemperaturealloyedconstruction. Thispackageishermeticallysealedandfatiguefreeascoefficientsofexpansionofallusedpartsarematched.Thepackageisdesignedtobeusedinaninsulatingmediumsuchasresin,oilorSF6gas. FEA