丝印：43U；Package：SOT758-1；Wideband high gain high linearity pre-driver amplifier 2.3 GHz - 4.2 GHz

description The BTS6403U is a wideband, high gain, high linearity pre-driver amplifier for 5G massive MIMO infrastructure applications, with fast on-off switching to support TDD systems. The BTS6403U is designed to operate between 2.3 GHz and 4.2 GHz. The BTS6403U is housed in a 3 mm x 3 mm x 0

文件：943.16 Kbytes 页数：15 Pages

恩XP

Wideband high gain high linearity pre-driver amplifier 2.3 GHz - 4.2 GHz

description The BTS6403U is a wideband, high gain, high linearity pre-driver amplifier for 5G massive MIMO infrastructure applications, with fast on-off switching to support TDD systems. The BTS6403U is designed to operate between 2.3 GHz and 4.2 GHz. The BTS6403U is housed in a 3 mm x 3 mm x 0

文件：943.16 Kbytes 页数：15 Pages

恩XP

Smart Sense High-Side Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit pro

文件：240.34 Kbytes 页数：15 Pages

INFINEON

英飞凌

Smart Sense High-Side Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit pro

文件：307.43 Kbytes 页数：17 Pages

INFINEON

英飞凌

Smart Sense High-Side Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit pro

文件：240.34 Kbytes 页数：15 Pages

INFINEON

英飞凌

Smart Sense High-Side Power Switch

General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions. Features • Short circuit pro

文件：240.34 Kbytes 页数：15 Pages

INFINEON

英飞凌

5G mMIMO预驱动放大器

恩XP

Smart Sense High-Side Power Switch

Infineon

英飞凌

Smart High Side Switches - 5,0-34V, 30mΩ Limit(scr) 24A

Infineon

英飞凌

Package：TO-220-7 成形引线；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR SWITCH N-CHAN 1:1 TO220-7

INFINEON

英飞凌