丝印：BTP；Package：DO-214AC；Surface Mount PAR Transient Voltage Suppressors

文件：84.46 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

General Purpose PNP Epitaxial Planar Transistor

Description • The BTP1207A3 is designed for general purpose amplification. • Large IC , IC( Max) = -0.6A • High BVCEO, BVCEO= -150V • Pb-free lead plating and halogen-free package

文件：301.93 Kbytes 页数：6 Pages

CYSTEKEC

全宇昕科技

PNP Epitaxial Planar High Current (High Performance) Transistor

Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage • Excellent gain characteristics specified up to 3 Amps • Ptot=3Watts • Extremely low equivalent on resistance, RCE(SAT)=75mΩ at 3A • Pb-free package

文件：264.11 Kbytes 页数：6 Pages

CYSTEKEC

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General Purpose PNP Epitaxial Planar Transistor

Description • The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power applications. • Low collector saturation voltage • High speed switching. • Complementary to BTN2222A3 • Pb-free package

文件：174.09 Kbytes 页数：5 Pages

CYSTEKEC

全宇昕科技

General Purpose PNP Epitaxial Planar Transistor

Description • The BTP2907AL3 is designed for general purpose amplifier applications. It is housed in the SOT-223 package which is designed for medium power surface mount applications. • Low VCE(sat) • High switching speed. • Complementary to BTN2222AL3

文件：135.88 Kbytes 页数：3 Pages

CYSTEKEC

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General Purpose PNP Epitaxial Planar Transistor

Description • The BTP2907AS3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. • Low VCE(sat) • High switching speed. • Complementary to BTN2222AS3

文件：146.34 Kbytes 页数：4 Pages

CYSTEKEC

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Low VCE(sat) PNP Epitaxial Planar Transistor

Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.5V(max) (IC=-1A, IB=-100mA). • Pb-free lead plating and halogen-free package

文件：264.1 Kbytes 页数：7 Pages

CYSTEKEC

全宇昕科技

Low VCE(sat) PNP Epitaxial Planar Transistor

Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.5V(max) (IC=-1A, IB=-100mA). • Pb-free lead plating and halogen-free package

文件：264.1 Kbytes 页数：7 Pages

CYSTEKEC

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General Purpose PNP Epitaxial Planar Transistor

Description • High Cutoff Frequency. • Complementary to BTN3904A3.

文件：154.37 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

General Purpose PNP Epitaxial Planar Transistor

Description • Complementary to BTN3904N3.

文件：181.87 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技