智能电机控制IC

The BTN7960 is a integrated high current half bridge for motor drive applications. It is part of the NovalithIC™ family containing one p- channel highside MOSFET and one n- channel lowside MOSFET with an integrated driver IC in one package. Due to the p- channel highside switch the need for a charge ·Path resistance of max. 30.5 mΩ @ 150 °C (typ. 16 mΩ @ 25 °C) High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ @ 25 °C) Low Side: max. 17.7 mΩ @ 150 °C (typ. 9 mΩ @ 25 °C) (for BTN7960B (SMD))\n ·Low quiescent current of typ. 7 μA @ 25 °C\n ·PWM capability of up to 25 kHz combined with active freewhee;

Infineon

英飞凌

丝印：BTN7960B；Package：PG-TO263-7-1；High Current PN Half Bridge NovalithIC

文件：784.13 Kbytes 页数：28 Pages

INFINEON

英飞凌

Package：TO-263-8，D²Pak（7 引线+接片），TO-263CA；包装：管件 功能：驱动器 - 全集成，控制和功率级 类别：集成电路（IC） 电机驱动器，控制器 描述：IC MOTOR DRIVER 8V-18V TO263-7

INFINEON

英飞凌

High Current PN Half Bridge NovalithIC 43 A, 7 m?? 9 m?

Overview The BTS 7960is part of the NovalithICfamily containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadfram

文件：463.71 Kbytes 页数：28 Pages

INFINEON

英飞凌

High Current PN Half Bridge NovalithIC 43 A, 7 m?? 9 m?

Overview The BTS 7960is part of the NovalithICfamily containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadfram

文件：463.71 Kbytes 页数：28 Pages

INFINEON

英飞凌

Multi-Standard Fully Integrated 13.56-MHz Radio Frequency Identification (RFID) Analog Front End and Data Framing Reader System

文件：354.6 Kbytes 页数：7 Pages

TI

德州仪器