| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNSiliconPlanarHighCurrent(HighPerformance)Transistor ■Features ●CollectorCurrentCapabilityIC=6A ●CollectorEmitterVoltageVCEO=60V ●ComplementarytoFZT951 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
NPNSILICONPLANARHIGHCURRENT(HIGHPERFORMANCE)TRANSISTORS FEATURES *Extremelylowequivalenton-resistance;RCE(sat)44mΩat5A *6Ampscontinuouscurrent,upto20Ampspeakcurrent *Verylowsaturationvoltages *ExcellenthFEcharacteristicsspecifiedupto10Amps | ZetexZetex Semiconductors 捷特科半导体 | Zetex | ||
SOT223NPNSILICONPLANARHIGHCURRENT Features •BVCEO>60V •IC=6AHighContinuousCollectorCurrent •ICM=20APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>60V •IC=6AHighContinuousCollectorCurrent •ICM=20APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>60V •IC=6AHighContinuousCollectorCurrent •ICM=20APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
FastSwitchingPlasticRectifier FEATURES •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Solderdip275°Cmax.10s,perJESD22-B106 •ComplianttoRoHSdirective2002/95/ECandin accordancetoWEEE2002/96/EC TYPICALAPPLICATIONS Forusei | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
FASTSWITCHINGPLASTICRECTIFIER FEATURES ♦PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ♦Highsurgecurrentcapability ♦Fastswitchingforhighefficiency ♦Constructionutilizesvoid-freemoldedplastictechnique ♦Highforwardcurrentoperation ♦Hightemperaturesolderingguaranteed:2 | GE GE Industrial Company | GE | ||
FastSwitchingPlasticRectifier FEATURES •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Lowleakagecurrent •Highforwardsurgecapability •Solderdip275°Cmax.10s,perJESD22-B106 •Materialcategorization:Fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 TYPICALAPPLICATIONS | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithOptionalAttenuatingGain | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping 1Features •Gainprogrammablefrom G=0.2to10,000byusingexternalresistor •Fullydifferentialoutputswithintegratedclamping •Lowoffsetvoltage:10μV(typ),35μV(max) •Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) •Lowinputbiascurrent:5nA(typ) •Inputstagenoise | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier 1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fullydifferentialoutputs –Independentoutputpower-supplypins –Outputcommon-modecontrol •Fastersignalprocessing: –Widebandwidth:10MHzatallgains | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
PGA855Low-Noise,Wide-Bandwidth,FullyDifferentialOutputProgrammable-GainInstrumentationAmplifier 1Features •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:1ppm/°C(max)atG=1V/V •Fullydifferentialoutputs –Independentoutputpower-supplypinstoallow forADCinputoverdriveprotection –Outputcommon-modecontrol •Faster | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
PGA849Low-Noise,Wide-Bandwidth,PrecisionProgrammableGainInstrumentationAmplifier 1Features •Differentialtosingle-endedconversion •Eightpin-programmablebinarygains –G(V/V)=⅛,¼,½,1,2,4,8,and16 •Lowgainerrordrift:2ppm/°C(max) •Fastersignalprocessing: –Widebandwidth:10MHzatallgains –Highslewrate:35V/μs –Settlingtime: 500nsto0.01 | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping 1Features •Gainprogrammablefrom G=0.2to10,000byusingexternalresistor •Fullydifferentialoutputswithintegratedclamping •Lowoffsetvoltage:10μV(typ),35μV(max) •Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) •Lowinputbiascurrent:5nA(typ) •Inputstagenoise | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
INA851Precision,Low-Noise,FullyDifferentialOutputInstrumentationAmplifierWithAttenuatingGainandOutputClamping 1Features •Gainprogrammablefrom G=0.2to10,000byusingexternalresistor •Fullydifferentialoutputswithintegratedclamping •Lowoffsetvoltage:10μV(typ),35μV(max) •Lowoffsetdrift:0.1μV/°C(typ),0.3μV/°C(max) •Lowinputbiascurrent:5nA(typ) •Inputstagenoise | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
EmbeddedController 1.Features 8032EmbeddedController −TwinTurboversion −1instructionat1machinecycle −Maximum10MHzforECdomainand8032 −Instructionsetcompatiblewithstandard8051 LPCBusInterface −CompatiblewiththeLPCspecificationv1.1 −SupportsI/Oread/write −SupportsMemory | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
SUBMINIATUREINTERMEDIATEPOWERRELAY | HONGFAXiamen Hongfa Electroacoustic Co., Ltd. 宏发电声厦门宏发电声股份有限公司 | HONGFA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
蓝牙模块 |
22+ |
SMD |
10000 |
绝对原装现货热卖 |
询价 | ||
MICROCHIP |
06+ |
SOT25 |
1280 |
询价 | |||
MICROCHIP/微芯 |
22+ |
RX TXRX MODULE |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
RAYSON |
23/22+ |
NA |
2000 |
代理渠道.实单必成 |
询价 | ||
IEI |
20+ |
sop |
10000 |
现货常备产品原装可到京北通宇商城查价格 |
询价 | ||
Infineon |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
INF |
16+ |
44P |
500 |
原装现货假一罚十 |
询价 | ||
INFINEON |
23+ |
QFP-44 |
12335 |
询价 | |||
INFINEON |
03/04+ |
MQFP44 |
9520 |
全新原装100真实现货供应 |
询价 | ||
INFINEO |
2339+ |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |
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