首页 >BTL1010>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SingleChipVeryLowPowerRFTransceiverwith8051-CompatibleMicrocontroller | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
SingleChipVeryLowPowerRFTransceiverwith8051-CompatibleMicrocontroller [Chipcon] ProductDescription TheCC1010isatruesingle-chipUHFtransceiverwithanintegratedhighperformance8051microcontrollerwith32kBofFlashprogrammemory.TheRFtransceivercanbeprogrammedforoperationinthe300–1000MHzrange,andisdesignedforverylowpowerwireles | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
SingleChipVeryLowPowerRFTransceiverwith8051-CompatibleMicrocontroller | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
SingleChipVeryLowPowerRFTransceiverwith8051-CompatibleMicrocontroller [Chipcon] ProductDescription TheCC1010isatruesingle-chipUHFtransceiverwithanintegratedhighperformance8051microcontrollerwith32kBofFlashprogrammemory.TheRFtransceivercanbeprogrammedforoperationinthe300–1000MHzrange,andisdesignedforverylowpowerwireles | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
PowerInductors | SUMIDASumida America Components Inc. 胜美达电子 | SUMIDA | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=14mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,63A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant RDS(ON)=13mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
SingleN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,9.5A,RDS(ON)=15.5mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■SurfacemountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
SingleN-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,9.5A,RDS(ON)=15.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
ITESwitch-ModePowerSupply | SLPOWER SL Power Electronics | SLPOWER |
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