N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 63A, RDS(ON) = 9.8 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant RDS(ON) = 14 mW @VGS = 4.5V.

文件：440.19 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 63A, RDS(ON) = 9.8 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant RDS(ON) = 13 mW @VGS = 4.5V.

文件：939.61 Kbytes 页数：5 Pages

CET-MOS

华瑞

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 9.5A, RDS(ON) = 15.5mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ Surface mount Package.

文件：439.58 Kbytes 页数：4 Pages

CET

华瑞

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 9.5A, RDS(ON) = 15.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：714.29 Kbytes 页数：4 Pages

CET-MOS

华瑞