GDT Protection Component

Features High insulation resistance » 4KV 10/700ps maximum surge rating in ‘accordance with ITU-TK 21 Ultra low capacitance(

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TECHPUBLIC

台舟电子

GDT Protection component

Techpublic

台舟电子

11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET

11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching tran

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Intersil

main ratings

11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET

文件：177.6 Kbytes 页数：6 Pages

SIEMENS

西门子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

文件：347.61 Kbytes 页数：2 Pages

ISC

无锡固电