丝印：BTC；Package：SOD-123FL；Transient Voltage Suppressor

文件：492.52 Kbytes 页数：5 Pages

BILIN

银河微电

GDT Protection Component

Features High insulation resistance » 4KV 10/700ps maximum surge rating in ‘accordance with ITU-TK 21 Ultra low capacitance(

文件：2.0283 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

NPN Epitaxial Planar Transistor

Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: • High BVCEO • Low VCE(SAT) • High current gain • Monolithic construction with built-in base-emitter shunt resistors

文件：159.55 Kbytes 页数：5 Pages

CYSTEKEC

全宇昕科技

NPN Epitaxial Planar Transistor

Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: • High BVCEO • Low VCE(SAT) • High current gain • Monolithic construction with built-in base-emitter shunt resistors

文件：139.9 Kbytes 页数：4 Pages

CYSTEKEC

全宇昕科技

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

文件：121.45 Kbytes 页数：3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

文件：121.45 Kbytes 页数：3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

文件：121.45 Kbytes 页数：3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

文件：121.45 Kbytes 页数：3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

文件：121.45 Kbytes 页数：3 Pages

UTC

友顺

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION As a NPN Darlington transistor the UTC BTC1510F3 is designed for general purpose amplifier and low speed switching application. FEATURES * Very high BVCEO * Very low VCE(SAT) * Very high current gain

文件：121.45 Kbytes 页数：3 Pages

UTC

友顺