8A SERIES TRIACS

Features ◇The LGE BTA08/BTB08, 8A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High bl

文件：3.51808 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

Blocking voltage to 600 V

Description Passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber. Appli

文件：433.67 Kbytes 页数：5 Pages

HAOPIN

好品微电子

Snubberless?? logic level and standard 8 A Triacs

文件：151.88 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

SENSITIVE GATE TRIACS

文件：817.41 Kbytes 页数：4 Pages

KERSEMI

丝印：BTB08-600BW；Package：TO-220AB；Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件：274.24 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

Triacs Silicon Bidirectional Thyristors

TRIACS 8 AMPERES RMS 600 thru 800 VOLTS Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. Features •locking Voltage to 800 V •On‐State Current Rating of 8 Amperes RMS at 25°C •Uniform Gate Trigger

文件：90.63 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

8A TRIACS

Description Available either in through-hole or surface-mount packages, the BTA08, BTB08, T810, T835 is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase contr

文件：129.28 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

Snubberless?? logic level and standard 8 A Triacs

文件：151.88 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

双向可控硅

ZG

中鑫半导体

三端双向可控硅

• 中断电压高达800伏\n• 25°C条件下通态电流额定值为8安培RMS\n• 在三个象限中实现一致的栅极触发电流\n• 高dv/dt抗扰度 - 125°C条件下最低为2000 V/s\n• 最大限度地缩小保护所需的缓冲网络\n• 工业标准TO-220AB封装\n• 高换向dI/dt - 125°C条件下最低为4 A/ms\n• 这些为无铅设备;

Littelfuse

力特