8A SERIES TRIACS

Features ◇The LGE BTA08/BTB08, 8A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High bl

文件：3.51808 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

Blocking voltage to 600 V

Description Passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber. Appli

文件：433.86 Kbytes 页数：5 Pages

HAOPIN

好品微电子

8A TRIACS

Description Available either in through-hole or surface-mount packages, the BTA08, BTB08, T810, T835 is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase contr

文件：129.28 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：BTB08-600SW；Package：TO-220AB；Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件：274.24 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

8A SERIES TRIACS

Features ◇The LGE BTA08/BTB08, 8A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b

文件：3.27356 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

8A SERIES TRIACS

Features ◇The LGE BTA08/BTB08, 8A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High bl

文件：3.51808 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

Blocking voltage to 600 V

Description Passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber. Appli

文件：433.84 Kbytes 页数：5 Pages

HAOPIN

好品微电子

丝印：BTB08-600TW；Package：TO-220AB；Snubberless™, logic level and standard 8 A Triacs

Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching. They

文件：274.24 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

8A TRIACS

Description Available either in through-hole or surface-mount packages, the BTA08, BTB08, T810, T835 is suitable for general purpose AC switching. It can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase contr

文件：129.28 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

8A SERIES TRIACS

Features ◇The LGE BTA08/BTB08, 8A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High b

文件：3.27356 Mbytes 页数：6 Pages

LUGUANG

鲁光电子