16A Triacs

文件：1.12561 Mbytes 页数：7 Pages

SIPOWER

isc Thyristors

文件：226.06 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：BTA316X-800CT；Package：TO-220F；3Q Triac

文件：397.54 Kbytes 页数：12 Pages

WEEN

瑞能半导体

3Q Hi-Com Triac

文件：272.87 Kbytes 页数：13 Pages

WEEN

瑞能半导体

16A Triacs

文件：1.12561 Mbytes 页数：7 Pages

SIPOWER

丝印：BTA316Y-800BT；Package：IITO-220；3Q Hi-Com Triac

文件：390.2 Kbytes 页数：12 Pages

WEEN

瑞能半导体

丝印：BTA316Y-800CT；Package：IITO-220；3Q Hi-Com Triac

文件：389.7 Kbytes 页数：12 Pages

WEEN

瑞能半导体

3-Quadrant Triacs

Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package. This \"series D\" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers. • 3Q technology for improved noise immunity\n• Direct interfacing with low power drivers and microcontrollers\n• Good immunity to false turn-on by dV/dt\n• High commutation capability with very sensitive gate\n• High voltage capability\n• Planar passivated for voltage ruggedness and reliability\n• T;

WeEn

瑞能半导体

3-Quadrant Triacs

Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package. This \"series E\" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers. • 3Q technology for improved noise immunity\n• Direct interfacing with low power drivers and microcontrollers\n• Good immunity to false turn-on by dV/dt\n• High commutation capability with sensitive gate\n• High voltage capability\n• Planar passivated for voltage ruggedness and reliability\n• Sensit;

WeEn

瑞能半导体

3-Quadrant Triacs

Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This \"series C\" triac will commutate the full RMS current at the maximum rated junction temperature without the a • 3Q technology for improved noise immunity\n• High commutation capability with maximum false trigger immunity\n• High immunity to false turn-on by dV/dt\n• High voltage capability\n• Less sensitive gate for high noise immunity\n• Planar passivated for voltage ruggedness and reliability\n• Triggerin;

WeEn

瑞能半导体