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BTA212

Three quadrant triacs high commutation

GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended foruse incircuits wherehigh staticand dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber

文件:19.3 Kbytes 页数:4 Pages

PHI

PHI

PHI

BTA212

12A Ⅲ SERIES TRIACS

Features ◇The LGE BTA212 series B , 12A Ⅲ quadrants series triacs .As silicon bidirectional device,with NPNPN five-layer structure;singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blocking voltage and high temperature

文件:528.13 Kbytes 页数:5 Pages

LUGUANG

鲁光电子

BTA212

Three quadrant triacs high commutation

文件:595.29 Kbytes 页数:8 Pages

WEEN

瑞能半导体

BTA212

Three quadrant triacs high commutation

文件:45.46 Kbytes 页数:4 Pages

PHI

PHI

PHI

BTA212

Three quadrant triacs high commutation

文件:17.63 Kbytes 页数:4 Pages

PHI

PHI

PHI

BTA212

Three quadrant triacs guaranteed commutation

文件:44.04 Kbytes 页数:4 Pages

PHI

PHI

PHI

BTA212

Three quadrant triacs high commutation

GENERAL DESCRIPTION\nGlass passivated high commutation triacs in a plastic envelope intended foruse incircuits wherehigh staticand dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.

恩XP

恩XP

BTA212-500-B

12A Ⅲ SERIES TRIACS

Features ◇The LGE BTA212 series B , 12A Ⅲ quadrants series triacs .As silicon bidirectional device,with NPNPN five-layer structure;singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blocking voltage and high temperature

文件:528.13 Kbytes 页数:5 Pages

LUGUANG

鲁光电子

BTA212-500C

Three quadrant triacs high commutation

GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended foruse incircuits wherehigh staticand dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber

文件:19.3 Kbytes 页数:4 Pages

PHI

PHI

PHI

BTA212-600B

TRIACS SENSITIVE GATE

GENERAL DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

文件:137.91 Kbytes 页数:2 Pages

COMSET

技术参数

  • Package name:

    TO-220AB

  • Product status:

    Production

  • VDRM [max]:

    600

  • IT(RMS) [max]:

    12

  • IGT [max] in quadrant 1:

    50

  • IGT [max] in quadrant 2:

    50

  • IGT [max] in quadrant 3:

    50

  • ITSM [max] @ 50 Hz:

    95

  • Tj [max]:

    125

供应商型号品牌批号封装库存备注价格
JXND
25+23+
TO-220B
50517
绝对原装正品现货,全新深圳原装进口现货
询价
恩XP
23+
TO-220
300000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
DISCRETE
1000
PH3
361000
询价
PHI
24+
TO-220F
7998
原装现货假一罚十
询价
恩XP
24+
218000
询价
恩XP
17+
TO-220F
6200
询价
恩XP
24+
N/A
13523
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ST
16+
TO-220
10000
全新原装现货
询价
恩XP
2016+
TO-220F
3900
只做原装,假一罚十,公司可开17%增值税发票!
询价
恩XP
24+
TO-220F
5000
全现原装公司现货
询价
更多BTA212供应商 更新时间2026-1-17 16:50:00