| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
10A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA10/BTB10, 10A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High 文件:2.72753 Mbytes 页数:5 Pages | LUGUANG 鲁光电子 | LUGUANG | ||
10A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA10/BTB10, 10A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High 文件:2.72753 Mbytes 页数:5 Pages | LUGUANG 鲁光电子 | LUGUANG | ||
10A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA10/BTB10, 10A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High 文件:2.75168 Mbytes 页数:5 Pages | LUGUANG 鲁光电子 | LUGUANG | ||
10A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA10/BTB10, 10A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High 文件:2.72753 Mbytes 页数:5 Pages | LUGUANG 鲁光电子 | LUGUANG | ||
10A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA10/BTB10, 10A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High 文件:2.75168 Mbytes 页数:5 Pages | LUGUANG 鲁光电子 | LUGUANG | ||
10A Ⅲ&ⅣSERIES TRIACS Features ◇The LGE BTA10/BTB10, 10A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High 文件:2.72753 Mbytes 页数:5 Pages | LUGUANG 鲁光电子 | LUGUANG | ||
10A TRIACS DESCRIPTION The UTC BTA10A is a 10A triacs which can be operated in 3 quadrants only, it uses UTC’s advanced technology to provide customers with high commutation performances, etc. The UTC BTA10A is suitable for inductive load switching operations, also can be used in ON/OFF function applicatio 文件:166.64 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
10A TRIACS DESCRIPTION The UTC BTA10A is a 10A triacs which can be operated in 3 quadrants only, it uses UTC’s advanced technology to provide customers with high commutation performances, etc. The UTC BTA10A is suitable for inductive load switching operations, also can be used in ON/OFF function applicatio 文件:166.64 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
10A TRIACS DESCRIPTION The UTC BTA10A is a 10A triacs which can be operated in 3 quadrants only, it uses UTC’s advanced technology to provide customers with high commutation performances, etc. The UTC BTA10A is suitable for inductive load switching operations, also can be used in ON/OFF function applicatio 文件:166.64 Kbytes 页数:3 Pages | UTC 友顺 | UTC | ||
10A TRIACS DESCRIPTION The UTC BTA10A is a 10A triacs which can be operated in 3 quadrants only, it uses UTC’s advanced technology to provide customers with high commutation performances, etc. The UTC BTA10A is suitable for inductive load switching operations, also can be used in ON/OFF function applicatio 文件:166.64 Kbytes 页数:3 Pages | UTC 友顺 | UTC |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Triac
- 性质:
SNUBBERLESS_DI_DT
- 封装形式:
直插封装
- 极限工作电压:
800V
- 最大电流允许值:
10A
- 最大工作频率:
<1MHZ或未知
- 引脚数:
3
- 可代换的型号:
- 最大耗散功率:
- 放大倍数:
- 图片代号:
B-10
- vtest:
800
- htest:
999900
- atest:
10
- wtest:
0
技术参数
- General Description:
10A standard and Snubberless™ Triacs
- RMS on-state current_max(A):
10
- Repetitive peak off-state voltage_max(V):
600
- Non repetitive surge peak on-state current_max(A):
100
- Junction Temperature_max(°C):
125
- Quadrants:
I
- Rate of decrease of commutating on-state current_min(@ TJ(Max))(A/ms):
4.4
- Rising Ratio Of Off Voltage_min(@ TJ(Max))(V/µs):
1000
- Marketing Status:
Active
- Triggering gate current on QIII_max(mA):
25
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-220 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
询价 | ||
ST |
24+ |
TO220ICLIP |
8866 |
询价 | |||
ST |
23+ |
TO-220 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
ST/意法 |
23+ |
TO-220 |
58000 |
询价 | |||
ST |
23+ |
TO-220 |
20000 |
正品原装货价格低 |
询价 | ||
ST |
23+ |
SDM/DIP |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
ST |
23+ |
TO-220 |
7000 |
询价 | |||
无锡亚伦 |
25+ |
TO-220 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
询价 | ||
UTC/友顺 |
24+ |
TO-220F |
100000 |
原装现货 |
询价 | ||
ST/意法 |
24+ |
D2PAK |
50000 |
只做原装,欢迎询价,量大价优 |
询价 |
相关规格书
更多- COS5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532-TD
- NE5532NB
- MAX232
- MAX232
- MAX232
- MAX232A
- MAX2323
- MAX2326
- MAX2327
- MAX232E
- MAX232E
- MAX232ESE
- NE5533
- SI7970DP
- SI7958DP
- SI7913DN
- SI7942DP
- SI7911DN
- SI7900EDN
- SI7922DN
- SI7946DP
- SI7945DP
- SI7921DN
- SI7905DN
- SI7938DP
- SI7925DN
- SI7948DP
- SI7946ADP
- SE1
- PI7C8150B
- PI7C8150DNDE
- PERICOMPI7C8150
- WNS40H100C
- WNS40H100CB
- TD62308
- TD62308APG
- TD62308AFG
- GRM21BR71H104JA11#
- TL074
相关库存
更多- NE5532
- NE5532
- NE5532
- NE5532
- NE5532
- NE5532A
- NE5532A
- UNE5532
- MAX232
- MAX232
- MAX232E
- MAX2325
- MAX2324
- MAX2321
- MAX2322
- MAX2320
- MAX232E-TD
- MAX232CPE
- SI7964DP
- SI7909DN
- SI7941DP
- SI7901EDN
- SI7940DP
- SI7956DP
- SI7980DP
- SI7902EDN
- SI7998DP
- SI7960DP
- SI7943DP
- SI7991DP
- SI7923DN
- SI7983DP
- SI7973DP
- SI7949DP
- SPC5605BF1MLQ6
- PI7C8150A
- PI7C8150DMAE
- XRCGB25M000F3N00R0
- WNS40H100CG
- MPC8540PX833LC
- TD62308BFG
- TD62308BP1G
- TD62308BF
- TL074
- TL074

