10A Ⅲ&ⅣSERIES TRIACS

Features ◇The LGE BTA10/BTB10, 10A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ &Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High

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LUGUANG

鲁光电子

TRIACS

DESCRIPTION The BTA10 GP’s use high performance, glass passivated chips. The insulated TO220AB package, the high surge current and low holding current make this family well adapted to LIGHT DIMMER applications. FEATURES .LOW IH= 13mA max .HIGH SURGE CURRENT : ITSM= 120A .IGTSPECIFIED IN FOU

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STMICROELECTRONICS

意法半导体

The BTA10-600GP uses high performance, glass passivated chips.

Description The BTA10-600GP uses high performance, glass passivated chips. The insulated TO-220AB package, the high surge current and low holding current make this product well adapted to CFL and LED dimmer applications Features ■ Low IH: – 13 mA max ■ High surge current: – ITSM = 1

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STMICROELECTRONICS

意法半导体

The BTA10-600GP uses high performance, glass passivated chips.

Description The BTA10-600GP uses high performance, glass passivated chips. The insulated TO-220AB package, the high surge current and low holding current make this product well adapted to CFL and LED dimmer applications Features ■ Low IH: – 13 mA max ■ High surge current: – ITSM = 1

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STMICROELECTRONICS

意法半导体

isc Thyristors

DESCRIPTION • With TO-220 packaging • Operating in 4 quadrants • High commutation capability • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Solid state relays;heating and cooking appliances • Switching applications

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ISC

无锡固电

10 A三端双向可控硅

The BTA10-600GP uses high performance, glass passivated chips.\n\n The insulated TO-220AB package, the high surge current and low holding current make this product well adapted to CFL and LED dimmer applications. • Low IH: \n •13 mA max \n• High surge current: \n •ITSM= 120 A \n• IGTspecified in four quadrants \n• Insulating voltage: \n •2500 V(RMS)(UL Recognized: E81734);

ST

意法半导体