N 沟道功率 MOSFET

The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part. • Excellent switching performance\n• World’s lowest R DS(on)\n• Very low Q g and Q gd\n• Excellent gate charge x R DS(on) product (FOM)\n• RoHS compliant-halogen free\n• MSL1 rated 2\n\n优势:\n• Environmentally friendly\n• Increased efficiency\n• Highest power density\n• Less paralleling required\n• S;

Infineon

英飞凌

OptiMOSTM3 Power-Transistor

• N-channel, normal level • Excellent gate charge x R ps(n) product (FOM) • Very low on-resistance Ros(on) 150 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application •Halogen-free according to IEC61249-2-21

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Infineon

英飞凌

TSDSON-8

Infineon

英飞凌

上传：深圳市威尔健半导体有限公司

TDSON-8

INFINEON/英飞凌

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TSDSON-8

Infineon

英飞凌

上传：深圳市威尔健半导体有限公司