BSZ300N15NS5

丝印：300N15NS；Package：PG-TSDSON-8FL；Metal Oxide Semiconductor Field Effect Transistor

Features •Idealforhighfrequencyswitchingandsynchronousrectification •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapp

BSZ300N15NS5

20V-300V N-Channel Power MOSFET; ·Lower R DS(on) without compromising FOM gd and FOM oss\n ·Lower output charge\n ·Ultra-low reverse recovery charge\n ·Increased commutation ruggedness\n ·Higher switching frequency possible\n;

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.