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BSZ011NE2LS5I中文资料Significantly reduced RDS(on) with best-in-class OptiMOS™ 5 25V power MOSFET in small PQFN 3.3x3.3mm package数据手册Infineon规格书
BSZ011NE2LS5I规格书详情
描述 Description
With the BSZ011NELS5I OptiMOS™ 5 power MOSFET, an additional device with integrated Schottky-like diode in high performance PQFN 3.3x3.3mm package is complementing Infineon’s high performance portfolio. It allows a further increase in system efficiency enabled by a significantly reduced RDS(on) in applications such as synchronous rectification in server and telecom SMPS. The outstanding electrical performance combined with a small PQFN 3.3x3.3mm package further enhances best-in-class power density and form factor improvement in the target applications.
特性 Features
优势:
技术参数
- 制造商编号
：BSZ011NE2LS5I
- 生产厂家
：Infineon
- OPN
：BSZ011NE2LS5IATMA1
- Qualification
：Non-Automotive
- Package name
：PQFN 3x3 (PG-TSDSON-8)
- VDS max
：25 V
- RDS (on) @10V max
：1.1 mΩ
- RDS (on) @4.5V max
：1.5 mΩ
- ID @25°C max
：40 A
- QG typ @10V
：37 nC
- QG typ @4.5V
：17 nC
- Special Features
：Schottky ( includes Schottky like and FETky )
- Polarity
：N
- Operating Temperature min
：-55 °C
- Operating Temperature max
：150 °C
- VGS(th) min
：1.2 V
- VGS(th) max
：2 V
- Technology
：OptiMOS™ 5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
23+ |
PG-TSDSON-8 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
Infineon/英飞凌 |
2025+ |
PG-TSDSON-8 |
8000 |
询价 | |||
INFINEON |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TSDSON-8 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
INFINEON |
23+ |
GOOP |
7000 |
询价 | |||
Infineon/英飞凌 |
23+ |
PG-TSDSON-8 |
10000 |
原装正品，支持实单 |
询价 | ||
Infineon |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TSDSON-8 |
12700 |
买原装认准中赛美 |
询价 |
