首页>BSZ011NE2LS5I>规格书详情
BSZ011NE2LS5I数据手册Infineon中文资料规格书
BSZ011NE2LS5I规格书详情
描述 Description
With the BSZ011NELS5I OptiMOS™ 5 power MOSFET, an additional device with integrated Schottky-like diode in high performance PQFN 3.3x3.3mm package is complementing Infineon’s high performance portfolio. It allows a further increase in system efficiency enabled by a significantly reduced RDS(on) in applications such as synchronous rectification in server and telecom SMPS. The outstanding electrical performance combined with a small PQFN 3.3x3.3mm package further enhances best-in-class power density and form factor improvement in the target applications.
特性 Features
优势:
技术参数
- 制造商编号
：BSZ011NE2LS5I
- 生产厂家
：Infineon
- OPN
：BSZ011NE2LS5IATMA1
- Qualification
：Non-Automotive
- Package name
：PQFN 3x3 (PG-TSDSON-8)
- VDS max
：25 V
- RDS (on) @10V max
：1.1 mΩ
- RDS (on) @4.5V max
：1.5 mΩ
- ID @25°C max
：40 A
- QG typ @10V
：37 nC
- QG typ @4.5V
：17 nC
- Special Features
：Schottky ( includes Schottky like and FETky )
- Polarity
：N
- Operating Temperature min
：-55 °C
- Operating Temperature max
：150 °C
- VGS(th) min
：1.2 V
- VGS(th) max
：2 V
- Technology
：OptiMOS™ 5
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TSDSON-8 |
8000 |
只做原装，欢迎询价，量大价优 |
询价 | ||
INFINEON |
22+ |
NA |
91 |
原装正品支持实单 |
询价 | ||
Infineon/英飞凌 |
2022+ |
PG-TSDSON-8 |
48000 |
只做原装,原装,假一罚十 |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TSDSON-8 |
25000 |
原装正品,假一赔十! |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TSDSON-8 |
25630 |
原装正品 |
询价 | ||
Infineon |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TSDSON-8 |
6820 |
只做原装,质量保证 |
询价 | ||
Infineon/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
Infineon |
24+ |
PG-TSDSON-8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TSDSON-8 |
12700 |
买原装认准中赛美 |
询价 |
