Fast thyristors

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SIEMENS

西门子

120 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

文件：1.05102 Mbytes 页数：8 Pages

WOLFSPEED

120 W, 6.0 GHz, GaN HEMT Die

Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power de

文件：592.12 Kbytes 页数：7 Pages

Cree

科锐

Low forward voltage drop

文件：592.04 Kbytes 页数：3 Pages

Littelfuse

力特