EPC1053

DC/DCConverter

Features ■70Typicalefficiencyatfullloadandat12VNominalinputvoltage ■Designedforlowcommonmodenoise ■Inputfiltertoreduceinputripplecurrent(Lessthan10mAp-ptypical) ■FuseProtected ■PulseWidthModulatorCircuit (Forhighefficiencyandexcellent

EPR1053G

T1/E1/CEPT/ISDN-PRIInterfaceTransformers

EPR1053G-RC

T1/E1/CEPT/ISDN-PRIInterfaceTransformers

ESDM1053

ESDProtectionDiodesMicro?뭦ackagedDiodesforESDProtection

TheESDM1053isdesignedtoprotectvoltagesensitivecomponents fromESD.Excellentclampingcapability,lowleakage,andfast responsetimeprovidebestinclassprotectionondesignsthatare exposedtoESD.Becauseofitssmallsize,itissuitedforusein smartphone,smart−watch,ormany

EVB-EMC1053

1CTripleTemperatureSensorwithResistanceErrorCorrectionandHotterofTwoZones

EVB-EMC1053C

1CTripleTemperatureSensorwithResistanceErrorCorrectionandHotterofTwoZones

FCX1053A

SOT89NPNmediumpowertransistor

FCX1053A

NPNSILICONPOWER(SWITCHING)TRANSISTOR

Description ThismediumpowerNPNtransistor,offeredintheSOT89packageprovideshighcurrentandlowsaturationvoltagemakingitidealforuseinvariousdrivingandpowermanagementapplications. Features •Extremelylowequivalenton-resistance;RCE(sat)=7.8m
Ωat4.5A •3Ampscont

FCX1053A

NPNSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●10Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto10Amps. ●ExtremelylowsaturationvoltageE.g.21mvTyp. ●Extremelylowequivalenton-resistance.RCE(sat)78mΩat4.5A.

FCX1053A

SOT89NPNmediumpowertransistor

Features •BVCEO>75V •IC=3AhighContinuousCurrent •ICM=10APeakPulseCurrent •HighGainHoldsuphFE>300@IC=1A •LowEquivalentOn-Resistance;RCE(sat)=78mΩat4.5A •ExcellenthFEcharacteristicsupto10A •TotallyLead-Free&FullyRoHScompliant(Notes1&2)