FDN352AP

P-Channel30V(D-S)MOSFET

Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■Highperformancetrenchtechnologyforextremelylow RDS(ON). ■HighpowerversionofindustryStandardSOT-23package. Identicalpin-outtoSOT-23with30higherpowerhandling capability.

FDN352AP

P-Channel30V(D-S)MOSFET

GeneralDescription Thesedevicesarewellsuitedforlowvoltageandbatterypowered applicationswherelowin-linepowerlossisneededina verysmalloutlinesurfacemountpackage. Features ■–1.3A,–30VRDS(ON)=180mΩ@VGS=–10V –1.1A,–30VRDS(ON)=300mΩ@VGS=–4.5V ■High

FDN352AP-HF

P-ChannelMOSFET

■Features ●VDS(V)=-30V ●ID=-1.3A(VGS=-10V) ●RDS(ON)

FN-352-Z

Multi-stageEMIFilter

FODM352

PhotodarlingtonOptocouplerwithaBase-EmitterResistorina4-PinFullPitchMini-FlatPackage

FODM352V

PhotodarlingtonOptocouplerwithaBase-EmitterResistorina4-PinFullPitchMini-FlatPackage

GA352Q

MURATASafetyRatedCeramicChipCapacitors

•LeadFree•250VAC(r.m.s.) •Basemetalandlead-freetechnology •GA3issafetyRated(Y2/Y3) •OperatingTemperature:-55°Cto+125°C •TemperatureCoefficient:X7R

GAB352N

PRESSFITAUTOMOTIVERECTIFIER

GAB352P

PRESSFITAUTOMOTIVERECTIFIER

GAM352

PressFitAutomotiveRectifier