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型号	下载订购	功能描述	制造商上传企业	LOGO
BSS84Z	文件：300 bytes Page：1 Pages	0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR These P-Channel enhancement mode field vertical D-MOStransistors are in a SOT-23-3 SMD package, and in mostapplications they require up to 0.13A DC and can deliver current up to 0.52A.This product is particularly suited to low voltage applicationsrequiring a low current high side switch. • RDS(ON)=10Ω @ VGS=-5V;	UTC 友顺	UTC
BSS84ZDW	文件：300 bytes Page：1 Pages	0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-363 SMD package, and in most applicationsthey require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch. • RDS(ON)=10Ω @ VGS=-4.5V;	UTC 友顺	UTC
BSS84ZT	文件：300 bytes Page：1 Pages	0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-523 SMD package, and in most applicationsthey require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch. • RDS(ON)=10Ω @ VGS=-4.5V;	UTC 友顺	UTC

VGS(±V)：
±20
ID(A)：
-0.13
RDS(ON)MAX.(mΩ)atVGS=4.5V：
10000
CISSTYP.(pF)：
25
COSSTYP.(pF)：
10
CRSSTYP.(pF)：
4.8
QgTYP.(nC)：
6
QgsTYP.(nC)：
1.2
QgdTYP.(nC)：
0.3
VGS(th)(V)MIN.：
-0.8
VGS(th)(V)MAX.：
-2.5
Package：
SOT-23-3_DFN1010-4_DFN1010-6_DFN1616-6_DFN1820-6_DFN2020-6_DFN2030-6_DFN2020-8_PDFN3×3_PDFN5×6

更多BSS84Z供应商更新时间2025-10-9 16:15:00