采用 SOT-223 封装的 75 V N 沟道小信号 MOSFET

所有的小型单个 n 通道系列产品均适合汽车应用（2N7002 除外）。 • 增强模式\n• 无铅镀层；符合 RoHS\n• 质量符合 AEC Q101 标准\n /* Style Definitions */ table.MsoNormalTable{mso-style-name:\"Table Normal\";mso-style-parent:\"\";line-height:115%;font-size:11.0pt;\"Calibri\",\"sans-serif\";mso-fareast-\"Times New Roman\";}\n优势:;

Infineon

英飞凌

OptiMOS??Small-Signal-Transistor

文件：590.2 Kbytes 页数：9 Pages

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Smart High-Side Power Switch Four Channels: 4 x 140m??Status Feedback

General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. • Providing embedded protective functions Applications • µC compatible high-side power switch with dia

文件：402.63 Kbytes 页数：14 Pages

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英飞凌

Smart High-Side Power Switch Four Channels: 4 x 140m??Status Feedback

General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. • Providing embedded protective functions Applications • µC compatible high-side power switch with dia

文件：402.63 Kbytes 页数：14 Pages

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英飞凌

Smart High-Side Power Switch

文件：283.18 Kbytes 页数：16 Pages

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