丝印：BSP52；Package：SOT223；NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：570.31 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：BSP52；Package：SC-73；NPN Darlington transistor

1. General description NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP62 2. Features and benefits • High current of 1 A • Low voltage of 80 V • Integrated diode and resistor • AEC-Q101 qualified 3. Applications • Industrial high gain amplification

文件：194.82 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BSP52；Package：SOT223；NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：570.31 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：BSP52；Package：SC-73；NPN Darlington transistor

1. General description NPN Darlington transistor in an SOT223 plastic package. PNP complement: BSP62 2. Features and benefits • High current of 1 A • Low voltage of 80 V • Integrated diode and resistor • AEC-Q101 qualified 3. Applications • Industrial high gain amplification

文件：194.82 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP60, BSP61 and BSP62. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification.

文件：47.65 Kbytes 页数：8 Pages

PHI

飞利浦

NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)

NPN Silicon Darlington Transistors ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BSP 60 … BSP 62 (PNP)

文件：152.87 Kbytes 页数：5 Pages

SIEMENS

西门子

NPN Darlington Transistor

NPN Darlington Transistor • This device is designed for applications requiring extremly high current gain at collector currents to 500mA. • Sourced from process 03.

文件：37.25 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

文件：92.5 Kbytes 页数：5 Pages

Infineon

英飞凌

NPN Darlington transistors

DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP60, BSP61 and BSP62. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Integrated diode and resistor. APPLICATIONS • Industrial high gain amplification.

文件：126.5 Kbytes 页数：7 Pages

恩XP

MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

PNP Small-Signal Darlington Transistors ThisPNP small signal darlington transistor is designed for use in switching applications,such as print hammer, relay, solenoid and lamp drivers.The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

文件：113.4 Kbytes 页数：6 Pages

Motorola

摩托罗拉