BSP100,135中文资料N-channel enhancement mode TrenchMOS™ transistor数据手册恩XP规格书

描述 Description

VDSS = 30 V
ID = 6 A
RDS(ON) ≤ 100 mΩ (VGS = 10 V)
RDS(ON) ≤ 200 mΩ (VGS = 4.5 V)GENERAL DESCRIPTION
N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology.FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• High thermal cycling performance
• Low thermal resistanceApplications:-
• Motor and relay drivers
• d.c. to d.c. converters
• Logic level translatorThe BSP100 is supplied in the SOT223 surface mounting package.

特性 Features

• ’Trench’ technology
• Low on-state resistance
• Fast switching
• High thermal cycling performance
• Low thermal resistanceApplications:-
• Motor and relay drivers
• d.c. to d.c. converters
• Logic level translatorThe BSP100 is supplied in the SOT223 surface mounting package.