Pressure Sensors

文件：120.2 Kbytes 页数：2 Pages

Balluff

巴鲁夫

Rad-Hard, quad high speed NAND gate

Features • 1.8 V to 3.3 V nominal supply • 3.6 V max. operating • 4.8 V AMR • Very high speed: propagation delay of 3 ns maximum guaranteed • Pure CMOS process • CMOS output • Ultra low power • 300 krad TID targeted • 125 MeV.cm2/mg SEL free • 62.5 MeV.cm2/mg SET free Description The

文件：631.47 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Rad-hard advanced high-speed 5 V CMOS logic series

文件：1.31391 Mbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

Rad-hard advanced high-speed 5 V CMOS logic series

文件：1.31391 Mbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体