订购数量 | 价格 |
---|---|
1+ |
首页>BSM50GX120DN2>芯片详情
BSM50GX120DN2_EUPEC_IGBT 模块星佑电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
BSM50GX120DN2
- 功能描述:
IGBT 模块
- RoHS:
否
- 制造商:
Infineon Technologies
- 产品:
IGBT Silicon Modules
- 配置:
Dual 集电极—发射极最大电压
- VCEO:
600 V
- 集电极—射极饱和电压:
1.95 V 在25
- C的连续集电极电流:
230 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
445 W
- 最大工作温度:
+ 125 C
- 封装/箱体:
34MM
供应商
相近型号
- BSM50GD60DN2E3226
- BSM600GA120DLC
- BSM50GD60DN2
- BSM700
- BSM50GD60DLC
- BSM75GAL120D
- BSM50GD170DL
- BSM75GAL120DLC
- BSM75GAL120DN2
- BSM50GD120DN2G
- BSM75GAR120DLC
- BSM75GAR120DN2
- BSM50GD120DN2E3226
- BSM75GB100D
- BSM50GD120DN2E3224
- BSM75GB100DN1
- BSM50GD120DN2BPSA1
- BSM75GB120D
- BSM50GD120DN2-B10
- BSM75GB120DL
- BSM50GD120DN2_E3226
- BSM75GB120DLC
- BSM50GD120DN2_B10
- BSM50GD120DN2
- BSM75GB120DN1
- BSM50GD120DLC
- BSM75GB120DN2
- BSM50GB60DLC
- BSM75GB120DN2/DLC
- BSM50GB170DN2
- BSM50GB170DLC
- BSM75GB170DLC
- BSM75GB170DN
- BSM50GB120DN2/DLC
- BSM75GB170DN2
- BSM50GB120DN2
- BSM75GB60DL
- BSM50GB120DN1
- BSM75GB60DLC
- BSM50GB120DLC
- BSM75GB60DLCHOSA1
- BSM50GB120D
- BSM75GD120DLC
- BSM50GB100D
- BSM50GAR120DN2
- BSM75GD120DN2
- BSM50GAR120DLC
- BSM75GD120DN2_B10
- BSM50GAL120DN2
- BSM50GAL120DLC