自恢复贴片保险丝

BORNSEMI

伯恩斯

1700V “全SiC”功率模块

BSM250D17P2E004是由罗姆公司生产的SiC-DMOSFET和SiC-SBD构成的“全SiC”半桥模块。在高温高湿偏压试验（HV-H3TRB）中实现了超过1,000小时也不发生绝缘击穿的高可靠性。由此，在高温高湿环境下也可放心耐受1700V高压。适合以室外发电系统和充放电试验机等评估装置为代表的工业设备用电源的变频器、转换器。 • Low surge, low switching loss.\n• High-speed switching possible.\n• Reduced temperature dependance.;

ROHM

罗姆

SiC Power Module

文件：910.01 Kbytes 页数：11 Pages

ROHM

罗姆

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Low-loss motor and actuator drivers • Power switching.

文件：114.24 Kbytes 页数：12 Pages

PHI

PHI

P-Channel 35 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • 100 UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switches, Adaptor Switch - Notebook PCs

文件：1.00563 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

P-channel enhancement mode vertical D-MOS transistor

FEATURES · High-speed switching · No secondary breakdown · Very low on-resistance. APPLICATIONS · Low-loss motor and actuator drivers · Power switching. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package.

文件：212.85 Kbytes 页数：13 Pages

NEXPERIA

安世