| 订购数量 | 价格 | 
|---|---|
| 1+ | 
BSM200GAR120DN2_EUPEC_IGBT 模块 1200V 200A GAR CH胜彬电子
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产品属性
- 类型描述 
- 型号:BSM200GAR120DN2 
- 功能描述:IGBT 模块 1200V 200A GAR CH 
- RoHS:否 
- 制造商:Infineon Technologies 
- 产品:IGBT Silicon Modules 
- 配置:Dual 集电极—发射极最大电压 
- VCEO:600 V 
- 集电极—射极饱和电压:1.95 V 在25 
- C的连续集电极电流:230 A 
- 栅极—射极漏泄电流:400 nA 
- 功率耗散:445 W 
- 最大工作温度:+ 125 C 
- 封装/箱体:34MM 
供应商
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