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首页>BSM150GB170DN2_E3166>芯片详情
BSM150GB170DN2_E3166_INFINEON/英飞凌_IGBT 模块 N-CH 1.7KV 220A安富世纪二部
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产品属性
- 类型
描述
- 型号:
BSM150GB170DN2_E3166
- 功能描述:
IGBT 模块 N-CH 1.7KV 220A
- RoHS:
否
- 制造商:
Infineon Technologies
- 产品:
IGBT Silicon Modules
- 配置:
Dual 集电极—发射极最大电压
- VCEO:
600 V
- 集电极—射极饱和电压:
1.95 V 在25
- C的连续集电极电流:
230 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
445 W
- 最大工作温度:
+ 125 C
- 封装/箱体:
34MM
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