| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>BSM100GT120DN2>芯片详情
BSM100GT120DN2_INFINEON/英飞凌_IGBT 模块 1200V 100A TRIPACK芯钻时代电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
BSM100GT120DN2
- 功能描述:
IGBT 模块 1200V 100A TRIPACK
- RoHS:
否
- 制造商:
Infineon Technologies
- 产品:
IGBT Silicon Modules
- 配置:
Dual 集电极—发射极最大电压
- VCEO:
600 V
- 集电极—射极饱和电压:
1.95 V 在25
- C的连续集电极电流:
230 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
445 W
- 最大工作温度:
+ 125 C
- 封装/箱体:
34MM
相近型号
- BSM-100G-LP
- BSM100OB120DN2
- BSM-100G-LF
- BSM101
- BSM100GD60DN2
- BSM10150GD60DL
- BSM10150GD60DLC
- BSM100GD60DLCBOSA1
- BSM101A4R
- BSM100GD60DLCBDLA1
- BSM101AR
- BSM100GD60DLC
- BSM-108
- BSM100GD60DL
- BSM10A-28SX-WG
- BSM100GD60
- BSM10A-3S1V2/T
- BSM100GD170DLC
- BSM10A-3S1V2/TG
- BSM100GD123DN2
- BSM10A-3S1V8
- BSM10A-3S1V8G
- BSM100GD120DN2DLC
- BSM10A-3S3V3G
- BSM100GD120DN2BOSA1
- BSM10A-3SXG
- BSM100GD120DN2BDLA1
- BSM10A-3SXGIC
- BSM100GD120DN2/DLC
- BSM10BCT1
- BSM100GD120DN2(DLC)
- BSM-10BCT1
- BSM100GD120DN2
- BSM100GD120DN
- BSM10BT1
- BSM10G
- BSM100GD120DLCBOSA1
- BSM10G060DNZ
- BSM100GD120DLC
- BSM10GD100D
- BSM100GD120DL
- BSM10GD100DN1
- BSM100GD120
- BSM10GD100DN2
- BSM100GD100DN1
- BSM10GD120D
- BSM100GD100D
- BSM10GD120DCL
- BSM100GB60DN2
- BSM10GD120DLC



