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首页>BSM100GB120DN2_E3256>芯片详情
BSM100GB120DN2_E3256_INFINEON/英飞凌_IGBT 模块 IGBT 1200V 100A芯钻时代电子
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产品属性
- 类型
描述
- 型号:
BSM100GB120DN2_E3256
- 功能描述:
IGBT 模块 IGBT 1200V 100A
- RoHS:
否
- 制造商:
Infineon Technologies
- 产品:
IGBT Silicon Modules
- 配置:
Dual 集电极—发射极最大电压
- VCEO:
600 V
- 集电极—射极饱和电压:
1.95 V 在25
- C的连续集电极电流:
230 A
- 栅极—射极漏泄电流:
400 nA
- 功率耗散:
445 W
- 最大工作温度:
+ 125 C
- 封装/箱体:
34MM
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- BSM100GB1200DL
- BSM100GB120(DLC
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- BSM100GB100D
- BSM100GB120NC2K(DLCK
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- BSM100GB123D
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- BSM100GB128DE
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- BSM100GAR120DLC
- BSM100GB170DL
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- BSM100GB170DLC
- BSM100GAL60DLC
- BSM100GB170DLCHOSA1
- BSM100GAL12ODL
- BSM100GB170DN2
- BSM100GAL120NC2K(DLC
- BSM100GAL120DN2K
- BSM100GB170DN2E3256
- BSM100GB170DN2HOSA1
- BSM100GAL120DN2
- BSM100GB173D
- BSM100GAL120DN



