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首页>BSM100GB120DN2_E3256>芯片详情
BSM100GB120DN2_E3256_INFINEON/英飞凌_IGBT 模块 IGBT 1200V 100A安富世纪二部
- 详细信息
- 规格书下载
产品属性
- 类型描述 
- 型号:BSM100GB120DN2_E3256 
- 功能描述:IGBT 模块 IGBT 1200V 100A 
- RoHS:否 
- 制造商:Infineon Technologies 
- 产品:IGBT Silicon Modules 
- 配置:Dual 集电极—发射极最大电压 
- VCEO:600 V 
- 集电极—射极饱和电压:1.95 V 在25 
- C的连续集电极电流:230 A 
- 栅极—射极漏泄电流:400 nA 
- 功率耗散:445 W 
- 最大工作温度:+ 125 C 
- 封装/箱体:34MM 
相近型号
- BSM100GB120DN2E3238
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- BSM100GB120DN2E3256
- BSM100GB120DN2
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- BSM100GB120DN2FE3256
- BSM100GB120DN1
- BSM100GB120DLCKHOSA1
- BSM100GB120DLCKG
- BSM100GB120DN2HOSA1
- BSM100GB120DLCK
- BSM100GB120DLCHOSA1
- BSM100GB120DN2K
- BSM100GB120DLCB
- BSM100GB120DLC_E3256
- BSM100GB120DN2KHOSA1
- BSM100GB120DLC
- BSM100GB120D
- BSM100GB120DN2-S7
- BSM100GB1200DL
- BSM100GB120(DLC
- BSM100GB120DNCK
- BSM100GB120
- BSM100GB120N2
- BSM100GB100D
- BSM100GB120NC2K(DLCK
- BSM100GAR60DLC
- BSM100GAR120DN2K
- BSM100GB123D
- BSM100GAR120DN2
- BSM100GB128D
- BSM100GAR120DN
- BSM100GB128DE
- BSM100GAR120DLCK
- BSM100GB160D
- BSM100GAR120DLC
- BSM100GB170DL
- BSM100GAR120D
- BSM100GB170DLC
- BSM100GAL60DLC
- BSM100GB170DLCHOSA1
- BSM100GAL12ODL
- BSM100GB170DN2
- BSM100GAL120NC2K(DLC
- BSM100GAL120DN2K
- BSM100GB170DN2E3256
- BSM100GB170DN2HOSA1
- BSM100GAL120DN2
- BSM100GB173D
- BSM100GAL120DN



